Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping (2000)
Source: Proceedings. Conference titles: International Workshop on Nitride Semiconductors. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
ABNT
RODRIGUES, S C P et al. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. 2000, Anais.. Tokyo: The Institute of Pure and Applied Physics-IPAP, 2000. . Acesso em: 09 maio 2024.APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2000). Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. In Proceedings. Tokyo: The Institute of Pure and Applied Physics-IPAP.NLM
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. Proceedings. 2000 ;[citado 2024 maio 09 ]Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. Proceedings. 2000 ;[citado 2024 maio 09 ]